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Single Electron Spin Measurements in Submicron Si MOS-FETs. Random Telegraph Signal, Single Electron Spin Resonance

Код 912542

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Аннотация к книге "Single Electron Spin Measurements in Submicron Si MOS-FETs. Random Telegraph Signal, Single Electron Spin Resonance"

Presented is our measurements of a single electronic spin in the gate oxide of submicron-size silicon field effect transistors. Defects near the silicon and silicon dioxide interface have profound effects on the transistor conduction properties. For a submicron transistor, there might be only one isolated trap state that is within a proper tunneling distance regarding to both the coordinate and energy. We have studied the statistics and dynamics of individual defects extensively by random...

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Издательство: Книга по требованию
Дата выхода: июль 2011
ISBN: 978-3-8364-9375-8
Объём: 124 страниц
Масса: 209 г
Размеры(высота, ширина, толщина), см: 23 x 16 x 1

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